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AUTOMOTIVE GRADE
PD - 96306A
AUIRGP50B60PD1 AUIRGP50B60PD1E
WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE
Applications
* Automotive HEV and EV * PFC and ZVS SMPS Circuits
G E C
VCES = 600V VCE(on) typ. = 2.00V @ VGE = 15V IC = 33A
Features
* Low VCE(ON) NPT Technology, Positive Temperature Coefficient * Lower Parasitic Capacitances * Minimal Tail Current * HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode * Tighter Distribution of Parameters * Lead-Free, RoHS Compliant * Automotive Qualified *
n-channel
Equivalent MOSFET Parameters RCE(on) typ. = 61m ID (FET equivalent) = 50A
G
C
E G C
E
Benefits
* Parallel Operation for Higher Current Applications * Lower Conduction Losses and Switching Losses * Higher Switching Frequency up to 150kHz
TO-247AC AUIRGP50B60PD1
TO-247AD AUIRGP50B60PD1E
Absolute Maximum Ratings
G Gate
C Collector
E Emitter
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Parameter Max. Units
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 25C IF @ TC = 100C IFRM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref. Fig. C.T.4) Clamped Inductive Load Current 600 75 45
h
V
d
150 150 40 15 60 20 390 156 -55 to +150 C 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m) V W A
Diode Continous Forward Current Diode Continous Forward Current Maximum Repetitive Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature for 10 sec. Mounting Torque, 6-32 or M3 Screw
e
Thermal Resistance
Parameter
RJC (IGBT) RJC (Diode) RCS RJA Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance Junction-to-Case-(each Diode) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) Weight
*Qualification standards can be found at http://www.irf.com/
Min.
--- --- --- --- ---
Typ.
--- --- 0.24 --- 6.0 (0.21)
Max.
0.32 1.7 --- 40 ---
Units
C/W
g (oz)
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1 11/02/10
AUIRGP50B60PD1/AUIRGP50B60PD1E
Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)CES
V(BR)CES/TJ
Min.
600 -- -- -- -- -- --
Typ.
-- 0.31 1.7 2.00 2.45 2.60 3.20 4.0 -10 41 5.0 1.0 1.30 1.20 --
Max. Units
-- -- -- 2.35 2.85 2.95 3.60 5.0 -- -- 500 -- 1.70 1.60 100 nA V V V
Conditions
VGE = 0V, IC = 500A 1MHz, Open Collector IC = 33A, VGE = 15V IC = 50A, VGE = 15V IC = 33A, VGE = 15V, TJ = 125C IC = 50A, VGE = 15V, TJ = 125C IC = 250A
Ref.Fig
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
V/C VGE = 0V, IC = 1mA (25C-125C)
4, 5,6,8,9
RG VCE(on)
Internal Gate Resistance Collector-to-Emitter Saturation Voltage
VGE(th)
VGE(th)/TJ
Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Collector-to-Emitter Leakage Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current
3.0 -- -- -- -- -- -- --
7,8,9
gfe ICES VFM IGES
mV/C VCE = VGE, IC = 1.0mA S VCE = 50V, IC = 33A, PW = 80s A mA V VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 125C IF = 15A, VGE = 0V IF = 15A, VGE = 0V, TJ = 125C VGE = 20V, VCE = 0V
10
Static or Switching Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
Qg Qgc Qge Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal td(on) tr td(off) tf Cies Coes Cres Coes eff. Coes eff. (ER) RBSOA trr Qrr Irr
Notes:
RCE(on) typ. = equivalent on-resistance = V CE(on) typ./ IC, where VCE(on) typ.= 2.00V and I C =33A. ID (FET Equivalent) is the equivalent MOSFET ID rating @ 25C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions. VCC = 80% (VCES), VGE = 15V, L = 28 H, RG = 22 . Pulse width limited by max. junction temperature. Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06. C oes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES. C oes eff.(ER) is a fixed capacitance that stores the same energy as C oes while VCE is rising from 0 to 80% VCES. Calculated continuous current based on maximum allowable junction temperature. Package current limit is 60A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
Min.
-- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
Typ.
205 70 30 255 375 630 30 10 130 11 580 480 1060 26 13 146 15 3648 322 56 215 163
Max. Units
308 105 45 305 445 750 40 15 150 15 700 550 1250 35 20 165 20 -- -- -- -- -- pF VGE = 0V VCC = 30V ns J ns J nC IC = 33A VCC = 400V VGE = 15V
Conditions
Ref.Fig 17 CT1
Total Gate Charge (turn-on) Gate-to-Collector Charge (turn-on) Gate-to-Emitter Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Time Related)
IC = 33A, VCC = 390V VGE = +15V, RG = 3.3, L = 200H TJ = 25C
CT3
fAA
IC = 33A, VCC = 390V VGE = +15V, RG = 3.3, L = 200H TJ = 25C
CT3
fAA f
IC = 33A, VCC = 390V VGE = +15V, RG = 3.3, L = 200H TJ = 125C IC = 33A, VCC = 390V VGE = +15V, RG = 3.3, L = 200H TJ = 125CAfAA
CT3 11,13 WF1,WF2 CT3 12,14 WF1,WF2
16
Effective Output Capacitance (Energy Related) Reverse Bias Safe Operating Area Diode Reverse Recovery Time Diode Reverse Recovery Charge Peak Reverse Recovery Current
g
--
g
-- --
f = 1Mhz VGE = 0V, VCE = 0V to 480V TJ = 150C, IC = 150A
15
3 CT2
FULL SQUARE -- -- -- -- -- -- 42 74 80 220 4.0 6.5 60 120 180 600 6.0 10 A nC ns
VCC = 480V, Vp =600V Rg = 22, VGE = +15V to 0V TJ = 25C TJ = 125C TJ = 25C TJ = 125C TJ = 25C TJ = 125C IF = 15A, VR = 200V, di/dt = 200A/s IF = 15A, VR = 200V, di/dt = 200A/s IF = 15A, VR = 200V, di/dt = 200A/s
19
21
19,20,21,22
CT5
2
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AUIRGP50B60PD1/AUIRGP50B60PD1E
Qualification Information
Automotive (per AEC-Q101) Qualification Level
Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level.
Moisture Sensitivity Level Machine Model Human Body Model Charged Device Model RoHS Compliant
TO-247AC TO-247AD
N/A Class M4 (+/-450V) AEC-Q101-002 Class H2 (+/-4500V) AEC-Q101-001 Class C5 (+/-1100V) AEC-Q101-005 Yes
ESD
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
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3
AUIRGP50B60PD1/AUIRGP50B60PD1E
90 80 70 60
450 400 350 300
Ptot (W)
IC (A)
50 40 30 20 10 0 0 20 40 60 80 100 120 140 160
250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 T C (C)
T C (C)
Fig. 1 - Maximum DC Collector Current vs. Case Temperature
1000
Fig. 2 - Power Dissipation vs. Case Temperature
200 180 160 VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V
100
140
ICE (A)
120 100 80 60 40 20
IC A)
10
1 10 100 1000
0 0 1 2 3 4 5 6 7 8 9 10
VCE (V)
VCE (V)
Fig. 3 - Reverse Bias SOA TJ = 150C; VGE =15V
200 180 160 140
ICE (A)
200
Fig. 4 - Typ. IGBT Output Characteristics TJ = -40C; tp = 80s
180 160 140
ICE (A)
120 100 80 60 40 20 0 0
VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V
120 100 80 60 40 20 0
VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
VCE (V)
VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics TJ = 25C; tp = 80s
Fig. 6 - Typ. IGBT Output Characteristics TJ = 125C; tp = 80s
4
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AUIRGP50B60PD1/AUIRGP50B60PD1E
900 800 700 600
ICE (A)
10 T J = 25C T J = 125C 9 8 7
VCE (V)
500 400 300 200 100 0 0 5 10 VGE (V) 15 20 TJ = 125C T J = 25C
6 5 4 3 2 1 0 5 10 VGE (V)
ICE = 15A ICE = 33A ICE = 50A
15
20
Fig. 7 - Typ. Transfer Characteristics VCE = 50V; tp = 10s
10 9 8 7
VCE (V)
I sa t n o sF r adCr e t -I ( ) n t n e u owr ur n a A
F
100
Fig. 8 - Typical VCE vs. VGE TJ = 25C
6 5 4 3 2 1 0 5 10 VGE (V)
ICE = 15A ICE = 33A ICE = 50A
10
TJ = 150C TJ = 125C TJ = 25C
15
20
1 0.8
1.2
1.6
2.0
2.4
Forward Voltage Drop - V FM (V)
Fig. 9 - Typical VCE vs. VGE TJ = 125C
1200 1000 800
Energy (J)
Fig. 10 - Typ. Diode Forward Characteristics tp = 80s
1000
Swiching Time (ns)
EON 600 EOFF 400 200 0 0 10 20 30 IC (A) 40 50 60
td OFF
100
tF tdON tR
10 0 10 20 30 40 50 60
IC (A)
Fig. 11 - Typ. Energy Loss vs. IC TJ = 125C; L = 200H; VCE = 390V, RG = 3.3; VGE = 15V. Diode clamp used: 30ETH06 (See C.T.3)
Fig. 12 - Typ. Switching Time vs. IC TJ = 125C; L = 200H; VCE = 390V, RG = 3.3; VGE = 15V. Diode clamp used: 30ETH06 (See C.T.3)
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AUIRGP50B60PD1/AUIRGP50B60PD1E
1000 900 800
1000
Energy (J)
EON
700 600 500 400 300 0 5 10 15 20 25
Swiching Time (ns)
tdOFF
100
EOFF
td ON tF
10 0
tR
5 10 15 20 25
RG ( )
RG ( )
Fig. 13 - Typ. Energy Loss vs. RG TJ = 125C; L = 200H; VCE = 390V, ICE = 33A; VGE = 15V Diode clamp used: 30ETH06 (See C.T.3)
40
Fig. 14 - Typ. Switching Time vs. RG TJ = 125C; L = 200H; VCE = 390V, ICE = 33A; VGE = 15V Diode clamp used: 30ETH06 (See C.T.3)
10000
Cies
30
Capacitance (pF)
1000
Eoes (J)
20
Coes
100
10
Cres
0 0 100 200 300 400 500 600 700 VCE (V)
10 0 20 40 60 80 100
VCE (V)
Fig. 15- Typ. Output Capacitance Stored Energy vs. VCE
16 14
Normalized V CE(on) (V)
Fig. 16- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz
1.4
12 10
VGE (V)
400V
1.2
8 6 4 2 0 0 50 100 150 200 250 Q G , Total Gate Charge (nC)
1.0
0.8 -50 0 50 100 150 200 T J (C)
Fig. 17 - Typical Gate Charge vs. VGE ICE = 33A
Fig. 18 - Normalized Typ. VCE(on) vs. Junction Temperature IC = 33A, VGE= 15V
6
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AUIRGP50B60PD1/AUIRGP50B60PD1E
100
100
VR = 200V TJ = 125C TJ = 25C
80
VR = 200V TJ = 125C TJ = 25C
I F = 30A
I F = 30A
60
I IRRM - (A)
t rr - (ns)
I F = 15A
10
IF = 15A
40
I F = 5.0A
I F = 5.0A
20 100
di f /dt - (A/s)
1000
1 100
di f /dt - (A/s)
1000
Fig. 19 - Typical Reverse Recovery vs. dif/dt
Fig. 20 - Typical Recovery Current vs. dif/dt
800
1000
VR = 200V TJ = 125C TJ = 25C
600
VR = 200V TJ = 125C TJ = 25C
IF = 30A
di(rec)M/dt - (A/s)
Q RR - (nC)
400
I F = 5.0A I F = 15A I F = 30A
I F = 15A IF = 5.0A
200
0 100
di f /dt - (A/s)
1000
100 100
di f /dt - (A/s)
1000
Fig. 21 - Typical Stored Charge vs. dif/dt
Fig. 22 - Typical di(rec)M/dt vs. dif/dt,
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7
AUIRGP50B60PD1/AUIRGP50B60PD1E
1
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20 0.10 0.05
R1 R1 J 1 2 R2 R2 C 1 2
0.01
0.01 0.02 SINGLE PULSE ( THERMAL RESPONSE )
J
Ri (C/W) i (sec) 0.157 0.000346 0.163 4.28
0.001
Ci= i/Ri Ci i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.001 0.01 0.1 1 10
0.0001 1E-006 1E-005 0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
Thermal Response ( Z thJC )
1
D = 0.50 0.20 0.10
0.1
0.05 0.01 0.02
J
R1 R1 J 1 2
R2 R2
R3 R3 3 C 3
Ri (C/W) i (sec) 0.363 0.000112 0.864 0.473 0.001184 0.032264
1
2
0.01
Ci= i/Ri Ci i/Ri
SINGLE PULSE ( THERMAL RESPONSE )
0.001 1E-006 1E-005 0.0001 0.001 0.01
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.1 1
t1 , Rectangular Pulse Duration (sec)
Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
8
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AUIRGP50B60PD1/AUIRGP50B60PD1E
L
L
0
DUT 1K
VCC
80 V Rg
DUT
480V
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
PFC diode
L
R=
VCC ICM
DUT / DRIVER
Rg
VCC
Rg
DUT
VCC
Fig.C.T.3 - Switching Loss Circuit
Fig.C.T.4 - Resistive Load Circuit
REVERSE RECOVERY CIRCUIT
VR = 200V
0.01 L = 70H D.U.T. dif/dt ADJUST D G IRFP250 S
Fig. C.T.5 - Reverse Recovery Parameter Test Circuit
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9
AUIRGP50B60PD1/AUIRGP50B60PD1E
600 550 500 450 400 350 VCE (V) 300 250 200 150 100 50 0 -50 -100 -0.20 0.00
Eoff 5% V CE tf 90% ICE
60 50 40 30 20 10 0 -10 0.40
450 400 350 300 250 VCE (V)
ICE (A)
90% ICE
90 80 70 60 50 40 30
5% V CE 10% ICE
tr
TEST CURRENT
200 150 100 50 0 -50 -0.10
20 10
5% ICE
Eon Loss
0 -10 0.20
0.20
0.00
0.10
Time (s)
Time(s)
Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 25C using Fig. CT.3
Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 25C using Fig. CT.3
3
IF 0
trr ta tb
4
2
Q rr I RRM
0.5 I RRM di(rec)M/dt 0.75 I RRM
5
1
di f /dt
4. Qrr - Area under curve defined by trr and IRRM trr X IRRM Qrr = 2 5. di(rec)M /dt - Peak rate of change of current during tb portion of trr
1. dif/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current
Fig. WF3 - Reverse Recovery Waveform and Definitions
10
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ICE (A)
AUIRGP50B60PD1/AUIRGP50B60PD1E TO-247AC Package Outline
Dimensions are shown in milimeters (inches)
TO-247AC Part Marking Information
Part Number
P50B60PD1
IR Logo
YWWA
XX or XX
Date Code Y= Year WW= Work Week A= Automotive, Lead Free
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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11
AUIRGP50B60PD1/AUIRGP50B60PD1E
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
Part Number
50B60PD1E
IR Logo
YWWA
XX or XX
Date Code Y= Year WW= Work Week A= Automotive, Lead Free
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
12
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AUIRGP50B60PD1/AUIRGP50B60PD1E
Ordering Information
Base part number AUIRGP50B60PD1 AUIRGP50B60PD1E Package Type TO-247AC TO-247AD Standard Pack Form Tube Tube Complete Part Number Quantity 25 25 AUIRGP50B60PD1 AUIRGP50B60PD1E
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AUIRGP50B60PD1/AUIRGP50B60PD1E
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the "AU" prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR's terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR's standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements. IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are specifically designated by IR as military-grade or "enhanced plastic." Only products designated by IR as military-grade meet military specifications. Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is solely at the Buyer's risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation "AU". Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements
For technical support, please contact IR's Technical Assistance Center http://www.irf.com/technical-info/
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
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